0102030405
I-AlN Powder ukucoceka okuphezulu kweAluminium nitride powder ixabiso 99% HJZ CAS: 25617-97-4 High-Entropy Alloys
Iipropati
•Isicelo:Uphando
•Ubunzima beMolekyuli :86.7535
•Indawo yokunyibilika:800°C
• Ubume: isuntswana
•Igama lebrand: Lonwin
• MOQ: 1KG
Ukusetyenziswa kweeMveliso
I-emitter eluhlaza okwesibhakabhaka kunye ne-UV enezicelo kwizixhobo ze-semiconductor ezibandakanya: ii-LED, ii-laser diode, ukukhanya, iziboniso, kunye nokugcinwa kwedatha. I-Gallium nitride (i-GaN) yi-wide band gap semiconducting material, enokusetyenziswa kuphuhliso lwezixhobo zombane ezahlukeneyo, ezifana ne-light emitting diodes (LEDs), kunye ne-field effect transistors (FETs). Inokusetyenziswa kwakhona njenge-dopant yensimbi yenguqu kwi-spintronics-based applications.
Ukupakisha:
Ukupakishwa kwethu okuqhelekileyo yi-25kgs/Drum
Ukupakishwa kungenziwa ngokwezifiso. ixesha lokuthumela lingaba ngolwandle, ngomoya, kunye nesampuli okanye inani elincinci lingathunyelwa nge-DHL, FEDEX, EMS kunye ne-TNT.
Phawula: Ukwakhiwa kweekhemikhali kunye nobukhulu bunokulungiswa ngokweemfuno zabathengi
Imiqathango yokugcina ngokukhuselekileyo, kuquka nakuphi na ukungahambelani
Yahlulwe kwi-ammonia, izisombululo ezinamandla zehydrogen peroxide kunye neeasidi ezomeleleyo.
Ukhuseleko loKhuseleko
Izilumkiso zokuphatha ngokukhuselekileyo
Ukuphatha kwindawo engena umoya. Nxiba iimpahla ezifanelekileyo zokuzikhusela. Kuphephe ukudibana nolusu namehlo. Kuphephe ukubunjwa kothuli kunye ne-aerosols. Sebenzisa izixhobo ezingatshisiyo. Thintela umlilo obangelwa ngumphunga wokukhupha i-electrostatic.