0102030405
Imboni kagesi i-AlN powder I-Aluminium Nitride Powder I-AlN Granule CAS 24304-00-5 Ingxubevange ephezulu
Izakhiwo
•Isicelo:Ucwaningo
•Isisindo se-Molecular:46.0279
•I-Melting Point:> 2200 °C
• Isimo: inhlayiya
•I gama le-brand: Lonwin
• I-MOQ: 1KG
Ukusetshenziswa Kwemikhiqizo
I-Aluminium nitride (AIN) iyimpahla ebalulekile ye-semiconductor yeqembu le-III-V, eye yavusa ukunakwa okukhulu ngenxa yezici eziningi ezivelele ezihlanganisa ukuguquguquka okuphezulu kwe-thermal (~320 Wm10 ^ -1 K^-1), ukumelana nogesi okuphezulu (>10 ^10 Ωcm), ukungaguquguquki kwe-dielectric ephansi (8.6), igebe lebhendi ebanzi (6.2eV), kanye ne-coefficient ephansi yokwandisa okushisayo (4.2x 10-6°C) -1 ukufanisa kokubili ama-semiconductors e-Si ne-GaN. I-AIl lezi zakhiwo zenza i-AIN ibe yikhandidethi elihle kakhulu elingasetshenziswa kumishini kagesi, ukukhanya, kanye nokukhipha insimu. Izinzuzo ze-Aluminium nitride Ukushisa okuphezulu kokushisa okune-thermal conductivity engu-170 W/m K Okunye okungewona ubuthi ku-BeO I-Thermal coefficient yokwandisa efana ne-Si, GaN, kanye nama-semiconductors e-GaAs Amandla aphezulu e-dielectric. I-Aluminium nitride ine-conductivity ephezulu kakhulu eshisayo futhi isetshenziswa ngempumelelo embonini ye-ceramic. Ithola ukusetshenziswa kuma-optoelectronics e-ultraviolet ajulile, ukukhiqizwa kwensimbi, izendlalelo ze-dielectric kumidiya yesitoreji esibonakalayo, abathwali be-chip nanjenge-crucible yokukhulisa amakristalu e-gallium arsenide. Ibuye isetshenziswe njengesihlungi sefrikhwensi yomsakazo, esithola ukusetshenziswa komakhalekhukhwini. Ngaphezu kwalokho, isetshenziswa njengesiphathi sesekethe kuma-semiconductors. Ngaphezu kwalokhu, isetshenziswa njenge-heat-sink kubuchwepheshe bokukhanyisa i-diode ekhipha ukukhanya. I-Aluminium nitride iyi-ceramic ephikisayo esetshenziswa njengento evikela ugesi ezisetshenziswa ezifana ne-aluminium oxide. I-AlN iphinde isetshenziswe kumadivayisi optical kanye ne-semiconductor ane-GaN ukukhiqiza ama-LED kusafire nakumadivayisi we-piezoelectric MEMS. Kugesi we-semiconductor; ekwakhiweni kwensimbi. Izingxenye ze-AlN nama-substrates asetshenziswa ezinjinini zikagesi, ama-microelectronics, umsakazo wasolwandle nezinhlelo zokuzivikela, izinhlelo zokuthutha izitimela, ezokuxhumana kanye namasathelayithi ocwaningo, nezinhlelo zokulawula ukungcola.
Ukupakisha:
Ukupakisha kwethu okujwayelekile kungu-25kgs/Drum
Iphakheji ingenziwa ngendlela oyifisayo. isikhathi sokuthumela singaba ngolwandle, ngomoya, futhi isampula noma inani elincane lingathunyelwa nge-DHL, FEDEX, EMS kanye ne-TNT.
Phawula: Ukwakheka kwekhemikhali nosayizi kungenziwa ngokugcwele ngezidingo zamakhasimende
Imibandela yokugcina okuphephile, okuhlanganisa noma yikuphi ukungahambisani
Ihlukaniswe ne-ammonia, izixazululo ezinamandla ze-hydrogen peroxide nama-asidi aqinile.
Ukuvikela Ukuphepha
Izinyathelo zokuphepha zokuphatha okuphephile
Ukuphatha endaweni enomoya omuhle. Gqoka izingubo ezifanele zokuzivikela. Gwema ukuthinta isikhumba namehlo. Gwema ukwakheka kothuli nama-aerosol. Sebenzisa amathuluzi angashiyi izinhlansi. Vimbela umlilo obangelwa umusi wokukhipha i-electrostatic.