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Titanium is a commonly used PVD coating target, and its nitride, carbonitride and oxide coatings are widely used in industrial and decorative fields.

Silicon carbide is a wide-band gap semiconductor with many excellent physicochemical properties, such as high hardness, high melting point, good thermal stability, and excellent chemical inertness. These properties make it useful in semiconductor devices, high-temperature structural materials and optoelectronic materials. However, the electronic structure of SiC determines its low conductivity, especially in the case of undoped, which becomes a major technical obstacle in DC sputtering.

Sputtering coating technology is notable for its material diversity and the development of multilayer coating technology. Common sputtering materials include aluminum, gold, titanium and so on. These materials show excellent properties in different applications. For example, aluminum has good electrical conductivity and reflection, and is widely used in electronic devices and optical films. Gold is often used in high-end electronic products because of its excellent corrosion resistance and electrical conductivity. Titanium is used in aerospace and medical devices because of its high strength and high temperature resistance. The development of multilayer coating technology makes it possible to deposit multiple layers of different materials on the same substrate, so as to obtain composite coatings with various excellent properties.

The internal factors of target cracking mainly include the crystal structure defect of the material itself, the internal stress distribution and the unequal heat treatment. The defects in the crystal structure of the material, such as dislocation, vacancy and grain boundary, are easy to become the starting point of cracks in the case of stress concentration. The uneven distribution of internal stress may be caused by the different cooling rate during the manufacturing process or the change of the thermal expansion coefficient of the material, and these stresses will gradually accumulate and release under certain conditions, forming cracks. In addition, the uneven cooling during the heat treatment process can also lead to thermal stresses inside the material, which, if not released in time, may lead to cracks on the surface or inside the material.

How does the sputtering efficiency of tungsten carbide target compare with other targets?

Tungsten carbide (WC), as a high-quality cemented carbide material, has been widely recognized in industrial applications because of its extremely high hardness, good wear resistance and corrosion resistance. In the field of sputtering technology, tungsten carbide targets are widely used to prepare films with high hardness and wear resistance. However, the sputtering efficiency of tungsten carbide is relatively low, which directly affects its application in thin film deposition. In order to understand the sputtering efficiency of tungsten carbide targets, we must first understand the basic definition and influencing factors of sputtering efficiency, and then compare it with other common targets to comprehensively evaluate the advantages and disadvantages of tungsten carbide in sputtering applications.

Copper particle sintering technology is a process in which dispersed copper particles are treated at high temperature to achieve metallurgical bonding between particles in solid phase or partial liquid phase to form sintered bodies with certain density and specific properties. The basic principle is to use the diffusion between particles, plastic flow, grain boundary migration, recrystallization and other mechanisms, as well as the liquid phase that may be generated during the sintering process to promote sintering, so that the gap between particles is reduced, and finally achieve the expected physical and chemical properties and mechanical properties.

Copper particle sintering technology is a process in which dispersed copper particles are treated at high temperature to achieve metallurgical bonding between particles in solid phase or partial liquid phase to form sintered bodies with certain density and specific properties. The basic principle is to use the diffusion between particles, plastic flow, grain boundary migration, recrystallization and other mechanisms, as well as the liquid phase that may be generated during the sintering process to promote sintering, so that the gap between particles is reduced, and finally achieve the expected physical and chemical properties and mechanical properties.

Copper particle sintering technology is a process in which dispersed copper particles are treated at high temperature to achieve metallurgical bonding between particles in solid phase or partial liquid phase to form sintered bodies with certain density and specific properties. The basic principle is to use the diffusion between particles, plastic flow, grain boundary migration, recrystallization and other mechanisms, as well as the liquid phase that may be generated during the sintering process to promote sintering, so that the gap between particles is reduced, and finally achieve the expected physical and chemical properties and mechanical properties.

Additive manufacturing (printing technology) is a revolutionary manufacturing technology that integrates advanced manufacturing, digital manufacturing, intelligent manufacturing, and green manufacturing. It not only changes the way products are manufactured, but also changes the future production and lifestyle modes, thereby changing human life. Currently, 3D printing is mainly used for prototype manufacturing, mold verification, and direct manufacturing. Direct manufacturing refers to the direct use of 3D printing technology to produce final products, which is the focus of future 3D printing. In direct manufacturing, metal additive manufacturing is the most rapidly developing additive manufacturing technology and industry development at present, and has been widely used in related fields such as aerospace, biomedical, industrial molds, and power energy.

TR-SFX, or time-resolved serial femtosecond crystallography, allows for the study of chemical reactions and dynamic processes at an incredibly small timescale, providing researchers with valuable insights into the behavior of chemicals and materials.